首页 >ECQE2184KF>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
FilmChipCapacitorStackedmetallizedPENfilmasdielectricwithsimplemold-lessconstruction | PANASONICBATTERYPanasonic Battery Group 松下电器松下电器（中国）有限公司 | PANASONICBATTERY | ||
SiliconNChannelPowerMOSFETPowerSwitching | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconNChannelPowerMOSFETPowerSwitching | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
Gatedrivesupplyrangefrom10to20V Description TheIR2184(4)(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithdependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOSorL | IRF International Rectifier | IRF | ||
HALF-BRIDGEDRIVER Description TheIR2184(4)(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithdependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOSorL | IRF International Rectifier | IRF | ||
HALF-BRIDGEDRIVER | IRF International Rectifier | IRF | ||
Gatedrivesupplyrangefrom10to20V Description TheIR2184(4)(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithdependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOSorL | IRF International Rectifier | IRF | ||
HALF-BRIDGEDRIVER Description TheIR2184(4)(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithdependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOSorL | IRF International Rectifier | IRF | ||
HIGHANDLOWSIDEDRIVER | IRF International Rectifier | IRF | ||
HALF-BRIDGEDRIVER | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
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