Diffused Junction Type Silicon Diode Variable Capacitance Diode for UHF Band VCO

Diffused Junction Type Silicon Diode Features • Low series resistance. rs=0.55Ω typ. • Ultraminiature (1008size) and (0.6mm) leadless package. Applications • 0.8 to 1.9GHz band VCO applications.

文件：27.16 Kbytes 页数：3 Pages

SANYO

三洋

Diffused Junction Type Silicon Diode Variable Capacitance Diode for UHF Band VCO

ONSEMI

安森美半导体

Power MOSFET 2 Am, 30 V

文件：57.85 Kbytes 页数：3 Pages

KEXIN

科信电子

Power MOSFET 2 Amps, 30 Volts Complementary SO-8, Dual

文件：116.72 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS

MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes

文件：381.35 Kbytes 页数：12 Pages

Motorola

摩托罗拉