EBE21AE8ACFA中文资料2GB Registered DDR2 SDRAM DIMM数据手册Micron规格书

描述 Description

2GB Registered DDR2 SDRAM DIMM

特性 Features

• Double-data-rate architecture; two data transfers per clock cycle
• The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture
• Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at
the receiver
• DQS is edge-aligned with data for READs; center aligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK transitions
• Commands entered on each positive CK edge; data referenced to both edges of DQS
• Data mask (DM) for write data
• Posted /CAS by programmable additive latency for better command and data bus efficiency
• Off-Chip-Driver Impedance Adjustment and On-Die Termination for better signal quality
• /DQS can be disabled for single-ended Data Strobe operation
• 1 piece of PLL clock driver, 2 pieces of register driver and 1 piece of serial EEPROM (2K bits EEPROM) for
Presence Detect (PD)