EB201开关的按钮开关规格书PDF中文资料

High Cell Density MOSFETs

Low On–Resistance Affords New Design Options

Just a few years ago an affordable 60 V, 10 mΩ power transistor was a dream. After all, 10 mΩ is the resistance of about 20 cm of #22 gauge wire. Today a sub–10 mΩ power MOSFET is not only available, it is housed in a standard TO–220. Such are the advances that have occurred lately in “high cell density” power MOSFET technology. Furthermore, Motorola’s high cell density technology, HDTMOS, brings other advantages such as greatly improved body diode performance. The technological advances are sufficiently great that they are fundamentally changing low voltage power transistor technology.