EB-A11012-XX-B资料datasheet下载贸易商-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
EB-A11012-XX-B	文件：79.49 Kbytes Page：1 Pages	EURO BLOCK 文件：79.49 Kbytes 页数：1 Pages	ADAM-TECH 亚当科技	ADAM-TECH
L-11012	文件：26.47 Kbytes Page：1 Pages	CURRENT SENSE INDUCTORS 文件：26.47 Kbytes 页数：1 Pages	RHOMBUS-IND	RHOMBUS-IND
MJ11012	文件：157.15 Kbytes Page：4 Pages	DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 (Min) @ IC – 20 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistor • Junction Temperature to +200°C 文件：157.15 Kbytes 页数：4 Pages	ONSEMI 安森美半导体	ONSEMI
MJ11012	文件：157.15 Kbytes Page：4 Pages	30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain - hFE= 1000 (Min) @ IC −20 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistor • Junction Temperature to +200C 文件：157.15 Kbytes 页数：4 Pages	Motorola 摩托罗拉	Motorola

更多EB-A11012-XX-B供应商更新时间2025-11-25 17:20:00