零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

PDTC144EQB-Q

Marking:E9;Package:DFN1110D-3;50 V, 100 mA NPN resistor-equipped transistors

Featuresandbenefits •100mAoutputcurrentcapability •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •Lowpackageheightof0.5mm •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •QualifiedaccordingtoAEC-Q

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PDTD123TK

Marking:E9;Package:SC-59A;NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

Features *Built-inbiasresistors *Simplifiescircuitdesign *500mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PMEG120G30ELP

Marking:E9;Package:CFP5;120 V, 3 A Silicon Germanium (SiGe) rectifier

Features •LowforwardvoltageandlowQrr •Extremelylowleakagecurrent •Thermalstabilityupto175°Cjunctiontemperature •Fastandsmoothswitching •Lowparasiticcapacitance •AEC-Q101qualified Benefits •Excellentefficiency •Extraordinarysafeoperatingarea •Minimalim

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PMEG120G30ELP-Q

Marking:E9;Package:CFP5;120 V, 3 A Silicon Germanium (SiGe) rectifier

1.Generaldescription SiliconGermanium(SiGe)rectifierencapsulatedinaCFP5(SOD128)smallandflatleadSurface- MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits FeaturesBenefits •LowforwardvoltageandlowQrr •Extremelylowleakagecurrent •Thermalstabilityupto

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PMEG3020EJ

Marking:E9;Package:SC-90;30 V, 2 A ultra low VF MEGA Schottky barrier rectifiers

Features *Forwardcurrent:2A *Reversevoltage:30V *Ultralowforwardvoltage *SmallandflatleadSMDpackage

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PMEG3020EJ-Q

Marking:E9;Package:SC-90;30 V, 2 A ultra low VF Schottky barrier rectifier

1.Generaldescription PlanarSchottkybarrierrectifierwithanintegratedguardringforstressprotection,encapsulatedin averysmallandflatleadSOD323F(SC-90)Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Forwardcurrent:2A •Reversevoltage:30V •U

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

SI2356DS

Marking:E9;Package:SOT-23;N-Channel MOSFET

■Features ●VDS(V)=40V ●ID=4.3A(VGS=10V) ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

SI2356DS-HF

Marking:E9;Package:SOT-23;N-Channel MOSFET

■Features ●VDS(V)=40V ●ID=4.3A(VGS=10V) ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

SZMM5Z13VT5G

Marking:E9;Package:SC-79;Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD523(SC-79)ultrasmallflatleadSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Non-repetitivepeakreversepowerdisspation:≤40W •Totalpowerdissipation:≤300mW •Toleranceseries:±2 •Wide

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BZT52H-B43

Marking:E9;Package:SOD-123F;Single Zener diodes in a SOD123F package

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

详细参数

  • 型号:

    E9

  • 功能描述:

    消费电池与相机电池 N CELL 1.5V

  • RoHS:

  • 制造商:

    FDK Batteries

  • 电池大小:

    CR1/3N

  • 输出电压:

    3 V

  • 容量:

    160 mAh

  • 化学性质:

    Lithium

  • 端接类型:

    Pressure Contacts

  • 可再充电/不可再充电:

    Non-Rechargeable

供应商型号品牌批号封装库存备注价格
N/A
23+
SOT23-5
15000
全新原装现货,价格优势
询价
TOSHIBA
23+
20000
现货库存
询价
EA
23+
6500
专注配单,只做原装进口现货
询价
EA
23+
6500
专注配单,只做原装进口现货
询价
A/N
25+
SOT23
30
原装正品,假一罚十!
询价
A/N
25+
SOT23
30
原装正品,假一罚十!
询价
INTEL/英特尔
2023+
BGA
57
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站
询价
24+
178
现货供应
询价
24+
N/A
48000
一级代理-主营优势-实惠价格-不悔选择
询价
2450+
6540
只做原厂原装现货或订货假一赔十!
询价
更多E9供应商 更新时间2025-7-25 16:56:00