E757NEO

Neodymium Magnets

DeepPots ■■Higheststrengthmagnetmaterialavailable ■■Cylindricalmagnetsinabrasspot.Steelpolepieces ■■Potisanessentialpartofthemagneticcircuit ■■Bothpolesareononefaceprovidingsuperiorgripatcontact ■■Suitableforgrippingandliftingapplications ■■Idealfor

FXT757

PNPSILICONPLANARMEDIUMPOWERHIGHVOLTAGETRANSISTOR

FEATURES *300VoltVCEO *0.5Ampcontinuouscurrent *Ptot=1Watt

FZT757

PNPSILICONPLANARHIGHVOLTAGETRANSISTOR

FEATURES *Lowsaturationvoltage *300VVCEO COMPLEMENTARYTYPE-FZT657 PARTMARKINGDETAIL-FZT757

FZT757

SOT223PNPSILICONPLANARHIGHVOLTAGETRANSISTOR

Features •BVCEO>-300V •IC=-0.5AContinuousCurrent •ICM=-1APeakPulseCurrent •ComplementaryNPNType:FZT657 •Lead-FreeFinish;RoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHighReliability

FZT757

SOT223NPNSILICONPLANARMEDIUMPOWERTRANSISTOR

FZT757TA

SOT223NPNSILICONPLANARMEDIUMPOWERTRANSISTOR

HMC757

GaAspHEMTMMIC1/2WATTPOWERAMPLIFIER,16-24GHz

GeneralDescription ThehmC757isathreestageGaAsphemTmmiC1/2wattpowerAmplifierwhichoperatesbetween16and24Ghz.ThehmC757provides22dBofgain,and+30dBmofsaturatedoutputpowerat30pAefroma+7Vsupply.Therfi/osareDCblockedandmatchedto50ohmsforeaseofintegr

HMC757

GaAspHEMTMMIC1/2WATTPOWERAMPLIFIER,16-24GHz

HMC757

ActiveBiasControllerHighCurrent

KRA757E

EPITAXIALPLANARPNPTRANSISTOR(SWITCHING,INTERFACECIRCUITANDDRIVERCIRCUIT)

SWITCHINGAPPLICATION. INTERFACECIRCUITANDDRIVERCIRCUITAPPLICATION. FEATURES ●WithBuilt-inBiasResistors ●SimplifyCircuitDesign ●ReduceaQuantityofPartsandManufacturingProcess ●HighPackingDensity.