BZX8450-C5V6-Q

Marking：E7；Package：SOT23；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinasmallSOT23(TO-236AB)Surface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤250mW •Toleranceseries:approximately±5 •Workingvoltagerange:nominal1.8Vto10V •Specif

BZX84W-B6V2

Marking：E7；Package：SOT323；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinaSOT323(SC-70)leadlessverysmallSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Wideworkingvoltagerange:nominal2.4Vto75V(E24range) •Twotoleranceseries:±2and±5 3.Applications •Gene

MM5Z11VT5G

Marking：E7；Package：SC-79；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD523(SC-79)ultrasmallflatleadSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Non-repetitivepeakreversepowerdisspation:≤40W •Totalpowerdissipation:≤300mW •Toleranceseries:±2 •Wide

NC7SZ11L6X

Marking：E7；Package：MicroPak；TinyLogic UHS Three-Input AND Gate

Description TheNC7SZ11isasinglethree−inputANDGatefromonsemi’s Ultra−HighSpeedSeriesofTinyLogic.Thedeviceisfabricatedwith advancedCMOStechnologytoachieveultra−highspeedwithhigh outputdrivewhilemaintaininglowstaticpowerdissipationovera broadVCCoperatingrang

PDTC143XQB

Marking：E7；Package：DFN1110D-3；50 V, 100 mA NPN resistor-equipped transistors

Featuresandbenefits •100mAoutputcurrentcapability •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •Lowpackageheightof0.5mm •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint

PDTC143XQB-Q

Marking：E7；Package：DFN1110D-3；50 V, 100 mA NPN resistor-equipped transistors

Featuresandbenefits •100mAoutputcurrentcapability •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •Lowpackageheightof0.5mm •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •QualifiedaccordingtoAEC-Q

PDTC144EM

Marking：E7；Package：SC-101；NPN resistor-equipped transistors; R1 = 47 k, R2 = 47 k

Featuresandbenefits 100mAoutputcurrentcapability Built-inbiasresistors Simplifiescircuitdesign Reducescomponentcount Reducespickandplacecosts AEC-Q101qualified

PDTD123YK

Marking：E7；Package：SC-59A；NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

Features *Built-inbiasresistors *Simplifiescircuitdesign *500mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

PMEG1030EJ

Marking：E7；Package：SC-90；10 V, 3 A ultra low VF Schottky barrier rectifier

1.Generaldescription PlanarSchottkybarrierrectifierwithanintegratedguardringforstressprotection,encapsulatedin averysmallandflatleadSOD323FSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Forwardcurrent:3A •Reversevoltage:10V •Ultralow

PMEG60T50ELP

Marking：E7；Package：CFP5；60 V, 5 A low leakage current Trench Schottky barrier rectifier

1.Generaldescription TrenchSchottkybarrierrectifierencapsulatedinaCFP5(SOD128)smallandflatleadSurface- MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Averageforwardcurrent:IF(AV)≤5A •Reversevoltage:VR≤60V •Lowforwardvoltage •Lowleakagecur