丝印：E56；DIGITAL TRANSISTOR

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design e

文件：704.49 Kbytes 页数：9 Pages

ROHM

罗姆

丝印：E56；Package：SOT-346；Digital transistor (built-in resistors)

Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely elimin

文件：51.02 Kbytes 页数：3 Pages

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丝印：E56；Package：SOT-346；PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)

Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely elimin

文件：806.56 Kbytes 页数：6 Pages

ROHM

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丝印：E56；Package：SOT-346；Digital transistor (built-in resistors)

Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely elimin

文件：57.27 Kbytes 页数：1 Pages

ROHM

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丝印：E56；Package：SOT-23；PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)

文件：1.68925 Mbytes 页数：9 Pages

ROHM

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丝印：E56；Package：SMT3；-100mA / -50V Digital transistors (with built-in resistors)

文件：140.71 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：E56；Package：SOT-346；PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)

文件：806.56 Kbytes 页数：6 Pages

ROHM

罗姆

丝印：E56；Package：SOT-723；PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)

文件：1.67959 Mbytes 页数：9 Pages

ROHM

罗姆

丝印：E56L25J；Package：SOT1023；N-channel 25 V, 0.63 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56E

1. General description N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56E package optimized for low RDSon and strong safe operating area, optimized for hot-swap, inrush and linearmode applications. 2. Features and benefits • Fully optimized Safe Operating Area (SOA) fo

文件：309.63 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：E565；Package：SOT-23-THIN；TPS3760 High Voltage Supervisor with Programmable Sense and Reset Delay Function

1 Features • Functional Safety-Capable – Documentation available to aid functional safety system design • Wide supply voltage range: 2.7 V to 65 V • SENSE and RESET pins are 65 V graded • Low quiescent current: 1 μA (typical) • Flexible and wide voltage threshold options Table 12-1 – 2.7

文件：1.89193 Mbytes 页数：44 Pages

TI

德州仪器