Probing Solutions for Logic Analyzers

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N-Channel PowerTrench짰 MOSFET 60V, 6.1A, 35m廓

文件：237.28 Kbytes 页数：6 Pages

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N-Channel PowerTrench® MOSFET 60V, 6.1A, 35mΩ

Features Max rDS(on) = 35mΩ at VGS = 10V, ID = 6.1A Max rDS(on) = 42mΩ at VGS = 4.5V, ID = 5.5A High performance trench technology for extremely low rDS(on) 100% UIL Tested RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanc

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ONSEMI

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Ergonomic Plugs for Square Tubing

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HEYCO