Power Meters and E-Series E9320 Peak and Average Power Sensors

文件：996.41 Kbytes 页数：19 Pages

KEYSIGHT

是德科技

N-channel field-effect transistor

DESCRIPTION N-channel symmetrical silicon junction FETs in a surface-mountable SOT23 envelope. These devices are intended for use in VHF/UHF amplifiers, oscillators and mixers. FEATURES • Low noise • Interchangeability of drain and source connections • High gain.

文件：95.15 Kbytes 页数：9 Pages

PHI

PHI

N-channel field-effect transistor

DESCRIPTION N-channel symmetrical silicon junction FETs in a SOT54 envelope. These devices are intended for use in VHF/UHF amplifiers, oscillators and mixers. FEATURES • Low noise • Interchangeability of drain and source connections • High gain.

文件：95.61 Kbytes 页数：9 Pages

PHI

PHI

N-channel field-effect transistor

DESCRIPTION N-channel symmetrical silicon junction FETs in a SOT54 envelope. These devices are intended for use in VHF/UHF amplifiers, oscillators and mixers. FEATURES • Low noise • Interchangeability of drain and source connections • High gain.

文件：95.61 Kbytes 页数：9 Pages

PHI

PHI