HighSpeed 2-Technology

• Designed for: - TV – Horizontal Line Deflection • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Ga

文件：201.5 Kbytes 页数：10 Pages

INFINEON

英飞凌

LM3045/LM3046/LM3086 Transistor Arrays

文件：179.01 Kbytes 页数：6 Pages

NSC

国半

LM3045/LM3046/LM3086 Transistor Arrays

文件：179.01 Kbytes 页数：6 Pages

NSC

国半

SWITCHMODE??Power Rectifier

SWITCHMODE™ Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. This state–of–the–art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 V Blocking Voltage • Low Forw

文件：50.97 Kbytes 页数：2 Pages

MOTOROLA

摩托罗拉