Eaton’s Moulded Accessory Range (EMA)

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EATON

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Low Distortion GaAs Power FET • +18.0dBm TYPICAL OUTPUT POWER • 11.0dB TYPICAL POWER GAIN AT 12GHz • TYPICAL 1.6 dB NOISE FIGURE AND 10 dB ASSOCIATED GAIN AT 12GHz • 0.3 X 240 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIEN

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文件：1.10831 Mbytes 页数：5 Pages

ALTECH