TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for low frequency power amplifier applications. Pinning 1 = Emitter 2 = Base 3 = Collector

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DCCOM

道全

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

DC Components

道全

Silicon NPN Transistor High Voltage Amp, Video Output

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NTE

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

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STMICROELECTRONICS

意法半导体

Transistor array to drive the small motor

■ Features ● Small and lightweight ● Low power consumption ● Low-voltage drive ● With 8 elements incorporated ■ Applications ● For motor drives ● Small motor drive circuits in general

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PANASONIC

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