MOSFET

Power Metal Strip® Battery Shunt Resistor With M4 Tapped Holes and Sn Plated Terminals,Very Low Value(50 μΩ,100μΩ,125μΩ and 250μΩ) ·AEC-Q200 qualified\n·Compliant with requirement #26 of NF-EN45545-2\n·Hifh power 600 W at 85℃ bottom case temperature;

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MOSFET

Power Metal Strip® Battery Shunt Resistor With M4 Tapped Holes and Sn Plated Terminals,Very Low Value(50 μΩ,100μΩ,125μΩ and 250μΩ) ·AEC-Q200 qualified\n·Compliant with requirement #26 of NF-EN45545-2\n·Hifh power 600 W at 85℃ bottom case temperature;

Dowellsemi

敦为

OptiMOS짧3 Power-Transistor, 30 V

文件：1.09292 Mbytes 页数：11 Pages

Infineon

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OptiMOS짧3 Power-Transistor, 30 V

文件：1.09292 Mbytes 页数：11 Pages

Infineon

英飞凌

OptiMOS3 Power Transistor

Features • MOSFET for ORing and Uninterruptible Power Supply • Qualified according to JEDEC1) for target applications • N-channel • Logic level • Ultra-low on-resistance RDS(on) • 100 Avalanche tested • Pb-free plating; RoHS compliant

文件：500.38 Kbytes 页数：9 Pages

Infineon

英飞凌