MOSFET

Power Metal Strip® Battery Shunt Resistor With M4 Tapped Holes and Sn Plated Terminals,Very Low Value(50 μΩ,100μΩ,125μΩ and 250μΩ) ·AEC-Q200 qualified\n·Compliant with requirement #26 of NF-EN45545-2\n·Hifh power 600 W at 85℃ bottom case temperature;

Dowellsemi

敦为

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • 2.5V drive. • Best suited for LiB charging and discharging switch. • Common-drain type.

文件：128.58 Kbytes 页数：6 Pages

SANYO

三洋

LV-PECL 7x5mm 3.3V OSCILLATOR

文件：209.58 Kbytes 页数：2 Pages

FOX

LV-PECL 7x5mm 3.3V OSCILLATOR

文件：209.58 Kbytes 页数：2 Pages

FOX