MOSFET

Power Metal Strip® Battery Shunt Resistor With M4 Tapped Holes and Sn Plated Terminals,Very Low Value(50 μΩ,100μΩ,125μΩ and 250μΩ) ·AEC-Q200 qualified\n·Compliant with requirement #26 of NF-EN45545-2\n·Hifh power 600 W at 85℃ bottom case temperature;

Dowellsemi

敦为

Dual 30V N-Channel PowerTrench SyncFET

General Description The FDS6990S is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. Each MOSFET includes integrated Schottky dio

文件：86.9 Kbytes 页数：6 Pages

Fairchild

仙童半导体

Dual N-Channel Logic Level PowerTrenchTM MOSFET

文件：119.4 Kbytes 页数：5 Pages

Fairchild

仙童半导体

Dual N-Channel Logic Level PowerTrenchTM MOSFET

文件：119.4 Kbytes 页数：5 Pages

Fairchild

仙童半导体