MOSFET

Power Metal Strip® Battery Shunt Resistor With M4 Tapped Holes and Sn Plated Terminals,Very Low Value(50 μΩ,100μΩ,125μΩ and 250μΩ) ·AEC-Q200 qualified\n·Compliant with requirement #26 of NF-EN45545-2\n·Hifh power 600 W at 85℃ bottom case temperature;

Dowellsemi

敦为

MOSFET ??Power, Single, N-Channel, Cool, UDFN6, 1.6x1.6x0.55 mm 30 V, 18 m, 6.9 A

文件：205.44 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single, N-Channel, Cool, UDFN6, 1.6x1.6x0.55 mm 30 V, 18 m, 6.9 A

文件：205.44 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

4V Drive Nch MOSFET

文件：68.55 Kbytes 页数：4 Pages

ROHM

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