首页 >DVFL2807SFDLKB>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
AdvancedProcessTechnology Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. ●AdvancedProcessTe | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
AdvancedProcessTechnology Description AdvancedMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,providesthede | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HEXFETPowerMOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
AdvancedProcessTechnologyUltraLowOn-Resistance Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VPT |
2318+ |
原装 |
4862 |
只做进口原装!假一赔百!自己库存价优! |
询价 | ||
VPT |
22+ |
原厂封装 |
105 |
有挂有货,原装正品现货 |
询价 | ||
VPT |
24+ |
NA |
200 |
进口原装正品优势供应 |
询价 | ||
VPT |
9738 |
19 |
全新进口原装现货-军工器件供应商 |
询价 | |||
VPT |
2138+ |
原厂标准封装 |
8960 |
专营军工产品,进口原装 |
询价 | ||
VPT |
23+ |
NA |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VPT |
24+ |
NA/ |
3262 |
原装现货,当天可交货,原型号开票 |
询价 | ||
VPT |
QQ咨询 |
NA |
74 |
全新原装 研究所指定供货商 |
询价 | ||
VPT |
25+ |
NA |
12 |
原装正品,假一罚十! |
询价 | ||
VPT |
25+ |
NA |
12 |
原装正品,假一罚十! |
询价 |
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