RF MOSFET Power Transistor, 6OW, 12V 2 - 175 MHz

Features • N-Channel Enhancement Mode Device • DMOS Structure • Lower Capacitances for Broadband Operation • High Saturated Output Power • Lower Noise Figure Than Bipolar Devices • Specifically Designed for 12 Volt Applications

文件：197.9 Kbytes 页数：3 Pages

MACOM

RF Power MOSFET Transistor 60W, 2-175MHz, 12V

Features • N-Channel enhancement mode device • DMOS structure • Lower capacitances for broadband operation • High saturated output power • Lower noise figure than bipolar devices • Specifically designed for 12 volt applications

文件：156.65 Kbytes 页数：3 Pages

MA-COM

2-175 MHz, 60W, 12V, RF MOSFET power transistor

MACOM

SLIDE SWITCHES

SLIDE SWITCHES FEATURES & BENEFITS ► Variety of package style s& sizes ► Up to 6 poles ► Variety of function ► Positive detent ► SMT options

文件：1.84692 Mbytes 页数：15 Pages

E-SWITCH

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Ultrahigh speed switching • 1.8V drive • Halogen free compliance • Protection diode in

文件：58.3 Kbytes 页数：4 Pages

SANYOSanyo Semicon Device

三洋三洋电机株式会社

General-Purpose Switching Device Applications

文件：211.8 Kbytes 页数：7 Pages

SANYOSanyo Semicon Device

三洋三洋电机株式会社