| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
DTP4N60F | Power MOSFET Reduced Gate Drive Requirement 文件：2.10134 Mbytes 页数：11 Pages | DINTEK 尚鼎芯 | DINTEK | |
Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications 文件：124.46 Kbytes 页数：6 Pages | MOTOROLA 摩托罗拉 | MOTOROLA | ||
Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications 文件：120.94 Kbytes 页数：5 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Insulated Gate Bipolar Transistor with Anti-Parallel Diode Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–block 文件：146.13 Kbytes 页数：6 Pages | ONSEMI 安森美半导体 | ONSEMI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
D |
22+ |
TO-220 |
6000 |
十年配单,只做原装 |
询价 | ||
DIN-TEK |
23+ |
TO-220 |
79999 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
TE/泰科 |
2405+ |
n/a |
9845 |
十年芯路!诚信赢客户!合作创未来! |
询价 | ||
TE |
24+ |
con |
10000 |
查现货到京北通宇商城 |
询价 | ||
TE/泰科 |
2508+ |
/ |
484664 |
一级代理，原装现货 |
询价 | ||
TE Connectivity |
2402+ |
NA |
6680 |
优势代理渠道,原装现货,可全系列订货 |
询价 | ||
TE(泰科) |
23+ |
CONN |
2 |
全新、原装 |
询价 | ||
TE |
25+ |
98 |
原厂现货渠道 |
询价 | |||
TE |
6 |
询价 | |||||
鑫远鹏 |
25+ |
NA |
5000 |
价优秒回原装现货 |
询价 |
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