丝印：E07；DIGITAL TRANSISTOR

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design e

文件：704.49 Kbytes 页数：9 Pages

ROHM

罗姆

Silicon MOS IC

文件：64.58 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon NPN Transistor Horizontal Deflection

Description: The NTE163A is an NPN silicon transistor in a TO3 type case designed for use in large screen color deflection circuits. Features: • Collector–Emitter Voltage: VCEX = 1500V • Collector–Emitter Sustaining Voltage: VCEO(sus) = 700V • Switching Times With Inductive Loads:

文件：22.93 Kbytes 页数：2 Pages

NTE

Silicon NPN Phototransistor

For optical control systems Features • High sensitivity • Fast response : tr = 4 µs (typ.) • Adoption of visible light cutoff resin • Ultraminiature, thin side-view type package

文件：45.92 Kbytes 页数：2 Pages

PANASONIC

松下