DTC115EET1G分立半导体产品的晶体管-双极（BJT）-单预偏置规格书PDF中文资料

DTC115EET1G属于分立半导体产品的晶体管-双极（BJT）-单预偏置。由安森美半导体公司制造生产的DTC115EET1G晶体管 - 双极（BJT）- 单，预偏置预偏置双极晶体管具有内部电阻器，设计用于在未施加输入信号的情况下将器件保持在偏置或工作点附近。晶体管偏置可使晶体管更有效地工作，并产生稳定、无失真的输出信号。预偏置晶体管减少了所需的外部电路元器件数量，从而可降低项目成本。

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC−75/SOT−416 package which is designed for low power surface mount applications.

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• The SC−75/SOT−416 Package Can be Soldered Using Wave or Reflow

• The Modified Gull−Winged Leads Absorb Thermal Stress During Soldering Eliminating the Possibility of Damage to the Die

• Pb−Free Packages are Available

• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable