HiPerFRED™ Epitaxial Diode ISOPLUS220™ Electrically Isolated Back Surface

• Silicon chip on Direct-Copper-Bond substrate\n   - High power dissipation\n   - Isolated mounting surface\n   - 2500V electrical isolation\n• Low cathode to tab capacitance (<15pF)\n• Planar passivated chips\n• Very short recovery time\n• Extremely low switching losses\n• Low IRM-values\n• Soft re;

Littelfuse

力特

30.0 Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers

文件：274.33 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode

HiPerFRED Low Loss and Soft Recovery High Performance Fast Recovery Diode Common Cathode Features / Advantages: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche vol

文件：134.62 Kbytes 页数：5 Pages

IXYS

艾赛斯

30.0 Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers

文件：280.14 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

Ultra fast Rectifier

FEATURES • With TO-220F packaging • High performance fast recovery diode • Low loss and soft recovery • Common cathode • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switching power supply • Power switching circuits • General purpose

文件：302.55 Kbytes 页数：2 Pages

ISC

无锡固电