HCTS132MS

RadiationHardenedQuad2-InputNANDSchmittTrigger

Description TheIntersilHCTS132MSisaRadiationHardenedQuad2-InputNANDSchmittTriggerinputs.AhighonbothinputsforcestheoutputtoaLowstate. TheHCTS132MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-sp

HF-132

WidebandRF/PulseTransformer5-200MHz/1-100MHz

HLMP-132X

T-1(3mm)HighIntensityLEDLamps

Description ThisfamilyofT-1lampsisspeciallydesignedforapplicationsrequiringhigheron-axisintensitythanisachievablewithastandardlamp.Thelightgeneratedisfocusedtoanarrowbeamtoachievethiseffect. Features •HighIntensity •Choiceof3BrightColors HighEffici

HMC132

GaAsMMICHIGH-ISOLATION

GeneralDescription TheHMC132chipisafast,broadbandSPDTswitchfeaturinghigh(40dB)isolationovertheentireband,providedbyon-chipgroundvias.Theswitchisnon-reflectiveatboththeRF1andRF2ports.Anegativecontrolvoltageof0/-5Vdcto0/-7Vdccontrolsthechannelsele

HMCAA132G

HIGHDENSITYCARDEDGE.050[1.27]VESAMICROCHANNELARCHITECTURE(MCA)

HMCAB132G

HIGHDENSITYCARDEDGE.050[1.27]VESAMICROCHANNELARCHITECTURE(MCA)

HSPPAD132A

DigitalPressureSensor

HVC132

SiliconEpitaxialPlanarPinDiodeforHighFrequencySwitching

Features •Lowcapacitance.(C=0.5pFmax) •Lowforwardresistance.(rf=2.0Ωmax) •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

HVC132

SiliconEpitaxialPlanarPinDiodeforAntennaSwitching

Features •Lowcapacitance.(C=0.5pFmax) •Lowforwardresistance.(rf=2.0Ωmax) •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

HVC132

SiliconEpitaxialPlanarPinDiode

Features ●Lowcapacitance.(C=0.5pFmax) ●Lowforwardresistance.(rf=2.0Ωmax)