256Kx36 & 512Kx18-Bit Synchronous Burst SRAM

GENERAL DESCRIPTION The K7B803625B and K7B801825B are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. FEATURES • Synchronous Operation. • On-Chip Address Counter. • Self-Timed Write Cycle. • On-Chip

文件：439.74 Kbytes 页数：19 Pages

SAMSUNG

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256Kx36 & 512Kx18-Bit Synchronous Burst SRAM

Samsung

三星

256Kx36 & 512Kx18-Bit Synchronous Burst SRAM

GENERAL DESCRIPTION The K7B803625B and K7B801825B are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. FEATURES • Synchronous Operation. • On-Chip Address Counter. • Self-Timed Write Cycle. • On-Chip

文件：439.74 Kbytes 页数：19 Pages

SAMSUNG

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256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM

文件：400.63 Kbytes 页数：18 Pages

SAMSUNG

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256Kx36 & 512Kx18-Bit Synchronous Burst SRAM

GENERAL DESCRIPTION The K7B803625B and K7B801825B are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. FEATURES • Synchronous Operation. • On-Chip Address Counter. • Self-Timed Write Cycle. • On-Chip

文件：439.74 Kbytes 页数：19 Pages

SAMSUNG

三星