DS_K7A803600B中文资料三星数据手册PDF规格书

GENERAL DESCRIPTION

The K7A803600B and K7A801800B are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.

FEATURES

• Synchronous Operation.

• 2 Stage Pipelined operation with 4 Burst.

• On-Chip Address Counter.

• Self-Timed Write Cycle.

• On-Chip Address and Control Registers.

• 3.3V+0.165V/-0.165V Power Supply.

• I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O

• 5V Tolerant Inputs Except I/O Pins.

• Byte Writable Function.

• Global Write Enable Controls a full bus-width write.

• Power Down State via ZZ Signal.

• LBO Pin allows a choice of either a interleaved burst or a linear burst.

• Three Chip Enables for simple depth expansion with No Data Contention only for TQFP ; 2cycle Enable, 1cycle Disable.

• Asynchronous Output Enable Control.

• ADSP, ADSC, ADV Burst Control Pins.

• TTL-Level Three-State Output.

• 100-TQFP-1420A

• Operating in commeical and industrial temperature range.