丝印：DS3680N；Package：PDIP；QUAD TELEPHONE RELAY DRIVER

Designed for –52-V Battery Operation 50-mA Output Current Capability Input Compatible With TTL and CMOS High Common-Mode Input Voltage Range Very Low Input Current Fail-Safe Disconnect Feature Built-in Output Clamp Diode Direct Replacement for National DS3680 and Fairchild mA3680 descri

文件：428.77 Kbytes 页数：11 Pages

TI

德州仪器

CMOS Static RAM 1 Meg (256K x 4-Bit) Revolutionary Pinout

Description The IDT71128 is a 1,048,576-bit high-speed static RAM organized as 256K x 4. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for hi

文件：81.06 Kbytes 页数：8 Pages

IDT

100V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features • 25 A, 100 V. RDS(ON) = 46 mΩ @ VGS = 10 V RDS(ON) = 51 mΩ @ VGS = 6 V • Low gate charge

文件：75.18 Kbytes 页数：5 Pages

Fairchild

仙童半导体

N-Channel 100-V (D-S) MOSFET

文件：984.77 Kbytes 页数：8 Pages

VBSEMI

微碧半导体