Demonstrates the Features of the DS28E80 IC

文件：5.87075 Mbytes 页数：28 Pages

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包装：散装 功能：EEPROM 类别：开发板，套件，编程器 评估和演示板及套件 描述：EVAL KIT FOR DS28E80

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Gamma Radiation Resistant 1-Wire Memory

General Description The DS28E80 is a user-programmable nonvolatile memory chip. In contrast to the floating-gate storage cells, the DS28E80 employs a storage cell technology that is resistant to gamma radiation. The DS28E80 has 248 bytes of user memory that are organized in blocks of 8 bytes.

文件：769.74 Kbytes 页数：28 Pages

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Gamma Radiation Resistant 1-Wire Memory

General Description The DS28E80 is a user-programmable nonvolatile memory chip. In contrast to the floating-gate storage cells, the DS28E80 employs a storage cell technology that is resistant to gamma radiation. The DS28E80 has 248 bytes of user memory that are organized in blocks of 8 bytes.

文件：769.74 Kbytes 页数：28 Pages

MAXIM

美信