1-Wire SHA3-256 Secure Authenticator with DS2431/DS28E07 Compatibility

Product Highlights The DS28E54 secure authenticator combines FIPS 202- compliant secure hash algorithm (SHA-3) challenge and response authentication with secured electrically erasable programmable read-only memory (EEPROM). The device provides a core set of cryptographic tools derived from i

文件：605.85 Kbytes 页数：31 Pages

AD

亚德诺

1-Wire SHA3-256 Secure Authenticator with DS2431/DS28E07 Compatibility

Features • DS2431/DS28E07 Reverse Compatibility • 2.25Kbits of EEPROM Memory Partitioned into 11 User Pages of 256 Bits (First Five Pages Compatible) • 64-Bit Scratchpad Buffer for Compatible Secure Writing with Offset and Individual Addressing • ±8kV HBM ESD Protection (typ) for IO Pin •

文件：543.8 Kbytes 页数：30 Pages

AD

亚德诺

Gamma Radiation Resistant 1-Wire Memory

General Description The DS28E80 is a user-programmable nonvolatile memory chip. In contrast to the floating-gate storage cells, the DS28E80 employs a storage cell technology that is resistant to gamma radiation. The DS28E80 has 248 bytes of user memory that are organized in blocks of 8 bytes.

文件：769.74 Kbytes 页数：28 Pages

MAXIM

美信

Gamma Radiation Resistant 1-Wire Memory

General Description The DS28E80 is a user-programmable nonvolatile memory chip. In contrast to the floating-gate storage cells, the DS28E80 employs a storage cell technology that is resistant to gamma radiation. The DS28E80 has 248 bytes of user memory that are organized in blocks of 8 bytes.

文件：769.74 Kbytes 页数：28 Pages

MAXIM

美信

Gamma Radiation Resistant 1-Wire Memory

General Description The DS28E80 is a user-programmable nonvolatile memory chip. In contrast to the floating-gate storage cells, the DS28E80 employs a storage cell technology that is resistant to gamma radiation. The DS28E80 has 248 bytes of user memory that are organized in blocks of 8 bytes.

文件：769.74 Kbytes 页数：28 Pages

MAXIM

美信

Gamma Radiation Resistant 1-Wire Memory

General Description The DS28E80 is a user-programmable nonvolatile memory chip. In contrast to the floating-gate storage cells, the DS28E80 employs a storage cell technology that is resistant to gamma radiation. The DS28E80 has 248 bytes of user memory that are organized in blocks of 8 bytes.

文件：769.74 Kbytes 页数：28 Pages

MAXIM

美信

DeepCover Radiation-Resistant 1-Wire Authenticator

Benefits and Features ●High Radiation Resistance Allows User-Programmable Manufacturing or Calibration DataBefore Medical Sterilization •Resistant up to 75kGy (kiloGray) of Radiation •One-Time-Programmable (OTP) 10kb of User Data,Keys, and Certificates ●ECC P-256 Compute Engine •FIPS 186 ECDS

文件：400.7 Kbytes 页数：21 Pages

AD

亚德诺

DeepCover Radiation-Resistant 1-Wire Authenticator

Benefits and Features ●High Radiation Resistance Allows User-Programmable Manufacturing or Calibration DataBefore Medical Sterilization •Resistant up to 75kGy (kiloGray) of Radiation •One-Time-Programmable (OTP) 10kb of User Data,Keys, and Certificates ●ECC P-256 Compute Engine •FIPS 186 ECDS

文件：400.7 Kbytes 页数：21 Pages

AD

亚德诺

DeepCover Radiation-Resistant 1-Wire Authenticator

Benefits and Features ●High Radiation Resistance Allows User-Programmable Manufacturing or Calibration DataBefore Medical Sterilization •Resistant up to 75kGy (kiloGray) of Radiation •One-Time-Programmable (OTP) 10kb of User Data,Keys, and Certificates ●ECC P-256 Compute Engine •FIPS 186 ECDS

文件：400.7 Kbytes 页数：21 Pages

AD

亚德诺

20Kb 1-Wire EEPROM

GENERAL DESCRIPTION The DS28EC20 is a 20480-bit, 1-Wire® EEPROM organized as 80 memory pages of 256 bits each. An additional page is set aside for control functions. Data is written to a 32-byte scratchpad, verified, and then copied to the EEPROM memory. As a special feature, blocks of eight memo

文件：683.25 Kbytes 页数：28 Pages

AD

亚德诺