Single-Chip Transceiver Design Kit Daughter Cards

GENERAL DESCRIPTION The DS2155/DS2156 design kits are evaluation boards for the DS2155 and DS2156. The DS2155/DS2156 design kits are intended to be used as daughter cards with either the DK2000 or the DK101 motherboards. The boards are complete with a single-chip transceiver (SCT), transformers,

文件：3.25827 Mbytes 页数：21 Pages

MAXIM

美信

T1/E1/J1单芯片收发器开发板子卡

DS2155/DS2156设计套件是DS2155和DS2156的评估板。DS2155/DS2156被设计作为DK2000或DK101母板的子卡使用。评估板包括了全套的单片收发器(SCT)、变压器、端接电阻、配置开关、线路保护电路、网络连接器和到母板的接口等部件。 \n• 免去首版原型过程，加速新设计的进度 \n• 与DK101或DK2000母板直接接口 \n• 展示DS2155和DS2156的主要功能 \n• 提供寄存器可视化访问的高层软件 \n• 软件控制(寄存器映像)配置开关，方便了时钟与信号的走线 \n• 用于75Ω E1的BNC连接 \n• 用于120Ω E1和100Ω T1的Bantam和RJ48连接器 \n• 多抽头变压器为75Ω及120Ω/100Ω通道提供真正的阻抗匹配 \n• 为网络接口提供过压和过流保护 \n• 为MPC8260提供UTOPIA II总线连接(仅DS2156) \n• UTOPIA II原型连接器(仅DS2156) \;

ADI

亚德诺

SELF-OSCILLATING HALF-BRIDGE DRIVER

Description The IR2155 is a high voltage, high speed, self-oscillating power MOSFET and IGBT driver with both high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The front end features a programmable oscill

文件：228.06 Kbytes 页数：6 Pages

IRF

3V PROGRAMMABLE GAIN POWER AMPLIFIER

Product Description The RF2155 is a 3V medium power programmable gain amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters or ISM appl

文件：91.57 Kbytes 页数：8 Pages

RFMD

威讯联合

3V PROGRAMMABLE GAIN POWER AMPLIFIER

Product Description The RF2155 is a 3V medium power programmable gain amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters or ISM appl

文件：91.57 Kbytes 页数：8 Pages

RFMD

威讯联合