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DS1345YL-100中文资料PDF规格书

DS1345YL-100
厂商型号

DS1345YL-100

参数属性

DS1345YL-100 封装/外壳为34-LPM;包装为管件;类别为集成电路(IC) > 存储器;产品描述:IC NVSRAM 1MBIT PARALLEL 34LPM

功能描述

1024K Nonvolatile SRAM with Battery Monitor

文件大小

219.44 Kbytes

页面数量

9

生产厂商 Dallas Semiconductor Corp.
企业简称

Dallas

中文名称

Dallas Semiconductor Corp.官网

原厂标识
数据手册

下载地址一下载地址二到原厂下载

更新时间

2024-6-25 18:52:00

DS1345YL-100规格书详情

DESCRIPTION

The DS1345 1024K Nonvolatile SRAMs are 1,048,576–bit, fully static, nonvolatile SRAMs organized as 131,072 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of– tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. Additionally, the DS1345 devices have dedicated circuitry for monitoring the status of VCC and the status of the internal lithium battery.

FEATURES

• Built–in lithium battery provides more than 10 years of data retention

• Data is automatically protected during VCC power loss

• Power supply monitor resets processor when VCC power loss occurs and holds processor in reset during VCC ramp–up

• Battery monitor checks remaining capacity daily

• Read and write access times as fast as 70 ns

• Unlimited write cycle endurance

• Typical standby current 50 µA

• Upgrade for 128K x 8 SRAM, EEPROM or Flash devices

• Lithium battery is electrically disconnected to retain freshness until power is applied for the first time

• Full ±10 VCC operating range (DS1345YL) or optional ±5 VCC operating range (DS1345BL)

• Low Profile Module package fits into standard 68–pin surface mountable PLCC sockets

• Optional industrial temperature range of –40°C to +85°C, designated IND

产品属性

  • 产品编号:

    DS1345YL-100

  • 制造商:

    Analog Devices Inc./Maxim Integrated

  • 类别:

    集成电路(IC) > 存储器

  • 包装:

    管件

  • 存储器类型:

    非易失

  • 存储器格式:

    NVSRAM

  • 技术:

    NVSRAM(非易失性 SRAM)

  • 存储容量:

    1Mb(128K x 8)

  • 存储器接口:

    并联

  • 写周期时间 - 字,页:

    100ns

  • 电压 - 供电:

    4.5V ~ 5.5V

  • 工作温度:

    0°C ~ 70°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    34-LPM

  • 供应商器件封装:

    34-LPM

  • 描述:

    IC NVSRAM 1MBIT PARALLEL 34LPM

供应商 型号 品牌 批号 封装 库存 备注 价格
Maxim
21+
34LPM
13880
公司只售原装,支持实单
询价
DALLAS
17+
PCB
9800
只做全新进口原装,现货库存
询价
MAXIM
23+
PWRCP
8888
专做原装正品,假一罚百!
询价
DALLAS
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
询价
DALLAS
21+
LPM/32
3
原装现货假一赔十
询价
DallasSemiconductor
22+23+
34-PCM
20185
绝对原装正品全新进口深圳现货
询价
DALLAS
2305+
原厂封装
12500
15年芯片行业经验/只供原装正品:0755-83267371邹小姐
询价
MaximIntegratedProducts
2022
ICNVSRAM1MBIT100NS34LPM
5058
原厂原装正品,价格超越代理
询价
MAX
22+
PCB
3600
绝对原装!现货热卖!
询价
MAXI
24+
N/A
6980
原装现货,可开13%税票
询价