256k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1330 256k NV SRAMs are 262,144-bit, fully static, NV SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithiu

文件：191.48 Kbytes 页数：11 Pages

DALLAS

1024k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1345 1024k Nonvolatile SRAMs are 1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit

文件：211 Kbytes 页数：12 Pages

DALLAS

4096k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1350 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit

文件：228.66 Kbytes 页数：12 Pages

DALLAS

256k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1330 256k NV SRAMs are 262,144-bit, fully static, NV SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithiu

文件：191.48 Kbytes 页数：11 Pages

DALLAS

256k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1330 256k NV SRAMs are 262,144-bit, fully static, NV SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithiu

文件：191.48 Kbytes 页数：11 Pages

DALLAS

256k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1330 256k NV SRAMs are 262,144-bit, fully static, NV SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithiu

文件：191.48 Kbytes 页数：11 Pages

DALLAS

包装：托盘 类别：集成电路（IC） 存储器 描述：IC NVSRAM 256K PARALLEL 34PWRCAP

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Package：34-PowerCap™ 模块；包装：管件 类别：集成电路（IC） 存储器 描述：IC NVSRAM 256KBIT PAR 34PWRCAP

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Package：34-PowerCap™ 模块；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 存储器 描述：IC NVSRAM 256KBIT PAR 34PWRCAP

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