256K Nonvolatille SRAM

DESCRIPTION The DS1235Y/AB 256K Nonvolatile SRAM is a 262,144-bit, fully static SRAM organized as 32,768 words by 8 bits. The nonvolatile memory has a self-contained lithium energy source and control circuitry that constantly monitor VCC for an out-of-tolerance condition. When such a condition oc

文件：511.17 Kbytes 页数：7 Pages

Dallas

256k非易失SRAM

ADI

亚德诺

Opto-Switch

文件：280.43 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

P-Channel Silicon MOSFET General-Purpose Switching Device Applications

文件：59.33 Kbytes 页数：4 Pages

SANYO

三洋

Trench P-Channel MOSFET

FEATURES · Drain Current -ID= -76A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 25mΩ(Max)@VGS= -10V APPLICATIONS · High-Side Switching · Battery Charger Applications · DC Choppers · Automatic Test Equipment · Current Regulators

文件：305.77 Kbytes 页数：2 Pages

ISC

无锡固电