DS1235Y

256K Nonvolatille SRAM

DESCRIPTION TheDS1235Y/AB256KNonvolatileSRAMisa262,144-bit,fullystaticSRAMorganizedas32,768wordsby8bits.Thenonvolatilememoryhasaself-containedlithiumenergysourceandcontrolcircuitrythatconstantlymonitorVCCforanout-of-tolerancecondition.Whensuchaconditionoc

EE-SX1235A

Opto-Switch

ENA1235

P-ChannelSiliconMOSFETGeneral-PurposeSwitchingDeviceApplications

ISF1235

TrenchP-ChannelMOSFET

FEATURES ·DrainCurrent-ID=-76A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=25mΩ(Max)@VGS=-10V APPLICATIONS ·High-SideSwitching ·BatteryChargerApplications ·DCChoppers ·AutomaticTestEquipment ·CurrentRegulators

LA1235

FMIFSystemApplications

Overview TheLA1235isahighintegratedICdevelopedforuseinhighS/N,lowdistortionFMIFsystemapplications.ThisICfeaturesS/N=88dB,distortionfactor=0.015andhasalmostallfunctionsrequiredforFMtunerIFstage. Features •HighS/N(88dBtyp.). •Lowdistortion(0.01

LB1235

High-Voltage,High-CurrentDarlingtonDriver?

FucntionsandFeatures •4-channel,high-voltage(65V),high-current(1.5A)Darlingtondriver. •On-chipsparkkillerdiodes. •Capableofbeingdirectdrivenwith5V-operatedTTL. •NPNinputhigh-activetype.

LTC1235

MicroprocessorSupervisoryCircuit

LTC1235

MicroprocessorSupervisoryCircuit

LTC1235C

MicroprocessorSupervisoryCircuit

LTC1235CN

MicroprocessorSupervisoryCircuit