DS1230Y-P70技术资料参数库存现货美信-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
DS1230Y-P70	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 页数：12 Pages	DALLAS	DALLAS
DS1230Y-P70IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 页数：12 Pages	DALLAS	DALLAS
DS1230YP-70IND+	文件：0 bytes Page：0 Pages	SMD-34P	ADI(亚德诺)/MAXIM(美信) 上传：深圳市宇创芯科技有限公司	ADI(亚德诺)/MAXIM(美信)
DS1232L	文件：0 bytes Page：0 Pages	SOP8	MAXIM/美信上传：深圳市得捷芯城科技有限公司	MAXIM/美信
DS1260-100	文件：0 bytes Page：0 Pages	DIP16	DALLAS 上传：芯有半导体（深圳）有限公司	DALLAS

更多DS1230Y-P70供应商更新时间2026-2-9 16:30:00