DS1204中文资料美信数据手册PDF规格书

Device Description:

A description of this device can be found in the product data sheet. You can find the product data

sheet at http://dbserv.maxim-ic.com/l_datasheet3.cfm.

Device Information:

Process:                             1P, 1M, 2.0um, Pfield , WJ BPSG ,

Number of Transistors:          Unknown

Passivation:                         Passivation w/Nitride

Die Size:                             100 x 82

Interconnect:                       Aluminum / 1 Silicon / 0.5 Copper

Gate Oxide Thickness:            250 Å