ISF1046

N-ChannelMOSFET

DESCRIPTION ·DrainCurrent-ID=41A@TC=25℃ ·DrainSourceVoltage -VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.21Ω(Max)@VGS=10V APPLICATIONS ·DC-DCconverter ·BatteryChargers ·Highspeedpowerswitch

KTA1046

EPITAXIALPLANARPNPTRANSISTOR

KTA1046

iscSiliconPNPPowerTransistors

DESCRIPTION •LowSaturationVoltage- :VCE(sat)=-1.0V(Max)@(IC=-2A,IB=-0.2A) •Collector-EmitterSustainingVoltage- :VCEO(SUS)=-60V(Min) •ComplementtoTypeKTC2026 •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Desi

KTA1046

EPITAXIALPLANARPNPTRANSISTOR

KTA1046

EPITAXIALPLANARPNPTRANSISTOR(INDUSTRIALUSE,GENERALPURPOSE)

INDUSTRIALUSE. GENERALPURPOSEAPPLICATION. FEATURES •LowCollectorSaturationVoltage :VCE(sat)=-1.0V(Max.)atIC=-2A,IB=-0.2A. •ComplementarytoKTC2026.

KTA1046

SiliconPNPtransistorinaTO-220FPlasticPackage.

Descriptions SiliconPNPtransistorinaTO-220FPlasticPackage. Features Lowcollectorsaturationvoltage,complementarytoKTC2026. Applications Generalpurposeamplifier.

KTA1046-G

PNPTransistors

KTA1046-Y

PNPTransistors

LTC1046

?쏧nductorless??5Vto5VConverter

LTC1046C

?쏧nductorless??5Vto5VConverter