丝印：DRVG611；Package：QFN4x5x1mm；High voltage and high-speed half-bridge gate driver for GaN power switches

Features • High voltage rail up to 600 V • dV/dt transient immunity ±200 V/ns • Driver with separated sink and source path for optimal driving: – 2.4 A and 1.2 Ω sink – 1.0 A and 3.7 Ω source • High-side and low-side linear regulators for 6 V gate driving voltage • Fast high-side startup ti

文件：1.70827 Mbytes 页数：33 Pages

STMICROELECTRONICS

意法半导体

丝印：DRVG611；Package：QFN4x5x1mm；High voltage and high-speed half-bridge gate driver for GaN power switches

Features • High voltage rail up to 600 V • dV/dt transient immunity ±200 V/ns • Driver with separated sink and source path for optimal driving: – 2.4 A and 1.2 Ω sink – 1.0 A and 3.7 Ω source • High-side and low-side linear regulators for 6 V gate driving voltage • Fast high-side startup ti

文件：1.70827 Mbytes 页数：33 Pages

STMICROELECTRONICS

意法半导体