DRV8962中文资料德州仪器数据手册PDF规格书

1 Features

• AEC-Q100 Qualified for Automotive

– Temperature grade 1: –40°C to +125°C, TA

• Functional Safety-Capable

– Documentation available to aid functional safety

system design

• Four-channel half-bridge driver

– Independent control of each half-bridge

• 4.5V to 60V operating supply voltage range

• Low RDS(ON): 50mΩ for each FET (24V, 25 °C)

• High current capacity: Up to 5A per output

• Can drive various types of loads -

– Up to four solenoids or valves

– One stepper motor

– Two brushed-DC motors

– One or two thermoelectric coolers (TEC)

– One 3-phase brushless-DC motor

– One 3-phase permanent magnet synchronous

motor (PMSM)

• Integrated current sense and regulation

– Current sensing for high-side MOSFETs

– Sense outputs (IPROPI) for each half-bridge

– ± 3.5 % sense accuracy at maximum current

– Optional external sense resistor

• Separate logic supply voltage (VCC)

• Programmable output rise/fall time

• Programmable fault recovery method

• Supports 1.8V, 3.3V, 5.0V logic inputs

• Low-current sleep mode (3μA)

• Protection features

– VM undervoltage lockout (UVLO)

– Charge pump undervoltage (CPUV)

– Overcurrent protection (OCP)

– Thermal shutdown (OTSD)

– Fault condition output (nFAULT)

2 Applications

• 24V and 48V Automotive Body Systems

• Door Modules, Mirrors, Shifter, Seats

• Trunk lift, Window lift

• Steering column, Sunroof shade

• Electric Vehicles, Truck, Bus and other

Commercial Vehicles

• BLDC Motor Modules

• TEC Drivers

3 Description

The DRV8962-Q1 is a wide-voltage, high-power,

four-channel half-bridge driver for various automotive

applications. The device supports up to 60V supply

voltage, and integrated MOSFETs with 50 mΩ onresistance

allow up to 5A current on each output.

The device can be used for driving up to four

solenoids or valves, one stepper motor, two brushed-

DC motors, one BLDC or PMSM motor and up to

two thermoelectric coolers (Peltier elements). The

output stage consists of N-channel power MOSFETs

configured as four independent half-bridges, charge

pump, current sensing and regulation circuits, current

sense outputs and protection circuitry.

Integrated current sensing across the high-side

MOSFETs allows the device to regulate the current

when the load is connected from output to ground. A

regulation current limit can be set with an adjustable

external voltage reference (VREF). Additionally, the

device provides four proportional current output pins,

one for each half-bridge high-side FET. Optional

external sense resistors can also be connected from

the PGND pins to the system ground.

A low-power sleep mode is provided to achieve ultralow

quiescent current. Internal protection features are

provided for supply undervoltage lockout, output over

current, and device overtemperature.