DRV8329BRGF-Q1中文资料德州仪器数据手册PDF规格书

1 Features

• 65V Three Phase Half-Bridge Gate Driver

– Drives 3 High-Side and 3 Low-Side N-Channel

MOSFETs (NMOS)

– 4.5 to 60V Operating Voltage Range

– Supports 100% PWM Duty Cycle with Trickle

Charge pump

• Bootstrap based Gate Driver Architecture

– 1000mA Maximum Peak Source Current

– 2000mA Maximum Peak Sink Current

• Integrated Current Sense Amplifier with low input

offset (optimized for 1 shunt)

– Adjustable Gain (5, 10, 20, 40V/V)

• Hardware interface provides simple configuration

• Ultra-low power sleep mode <1uA at 25 ̊C

• 4ns (typ) propagation delay matching between

phases

• Independent driver shutdown path (DRVOFF)

• 65V tolerant wake pin (nSLEEP)

• Supports negative transients upto -10V on SHx

• 6x and 3x PWM Modes

• Supports 3.3V, and 5V Logic Inputs

• Accurate LDO (AVDD), 3.3V ±3%, 80mA

• Compact QFN Packages and Footprints

• Adjustable VDS overcurrent threshold through

VDSLVL pin

• Adjustable deadtime through DT pin

• Efficient System Design With Power Blocks

• Integrated Protection Features

– PVDD Undervoltage Lockout (PVDDUV)

– GVDD Undervoltage (GVDDUV)

– Bootstrap Undervoltage (BST_UV)

– Overcurrent Protection (VDS_OCP, SEN_OCP)

– Thermal Shutdown (OTSD)

– Fault Condition Indicator (nFAULT)

2 Applications

• Brushless-DC (BLDC) Motor Modules and PMSM

• Automotive Pumps

• Automotive HVAC fans

• E-Bikes, E-Scooters, and E-Mobility

• Automotive Body Electronics (Window, Door,

Sunroof, Seat, Wiper) Modules

3 Description

The DRV8329-Q1 family of devices is an integrated

gate driver for three-phase applications. The devices

provide three half-bridge gate drivers, each capable

of driving high-side and low-side N-channel power

MOSFETs. The device generates the correct gate

drive voltages using an internal charge pump and

enhances the high-side MOSFETs using a bootstrap

circuit. A trickle charge pump is included to support

100% duty cycle. The Gate Drive architecture

supports peak gate drive currents up to 1A source

and 2A sink. The DRV8329-Q1 can operate from a

single power supply and supports a wide input supply

range of 4.5 to 60V.

The 6x and 3x PWM modes allow for simple

interfacing to controller circuits. The device has

integrated accurate 3.3V LDO that can be used

to power external controller and can be used as

reference for CSA. The configuration settings for the

device are configurable through hardware (H/W) pins.

The DRV8329-Q1 devices integrate low-side current

sense amplifier that allow current sensing for sum of

current from all three phases of the drive stage.

A low-power sleep mode is provided to achieve

low quiescent current by shutting down most of

the internal circuitry. Internal protection functions

are provided for undervoltage lockout, GVDD fault,

MOSFET overcurrent, MOSFET short circuit, and

overtemperature. Fault conditions are indicated on

nFAULT pin.