DRV8305-Q1开发板套件编程器的评估演示板及套件规格书PDF中文资料

DRV8305-Q1属于开发板套件编程器的评估演示板及套件。由德州仪器制造生产的DRV8305-Q1评估和演示板及套件该系列产品提供了一种方便的方法，在经过验证的实施环境中评估某些重点器件的性能或特性。评估方法通常有完善的文档说明，并且视乎具体情况由评估软件提供支持。产品通常由印刷电路板组成，板上已装有重点器件以及必要或有用的支持元器件，另外也可能包括其他组件，例如电缆或电源。对于数量特别多或类别独特的器件类别(如 ADC、DAC 和开关模式电源)，评估平台可组合为一个单独的产品系列。

1 Features

1• 4.4-V to 45-V Operating Voltage

• 1.25-A and 1-A Peak Gate Drive Currents

• Programmable High- and Low-Side Slew-Rate

Control

• Charge-Pump Gate Driver for 100% Duty Cycle

• Three Integrated Current-Shunt Amplifiers

• Integrated 50-mA LDO (3.3-V and 5-V Option)

• 3-PWM or 6-PWM Input Control up to 200 kHz

• Single PWM-Mode Commutation Capability

• Supports Both 3.3-V and 5-V Digital Interface

• Serial Peripheral Interface (SPI) for Device

Settings and Fault Reporting

• Thermally-Enhanced 48-Pin HTQFP

• Protection Features:

– Fault Diagnostics and MCU Watchdog

– Programmable Dead-Time Control

– MOSFET Shoot-Through Prevention

– MOSFET VDS Overcurrent Monitors

– Gate-Driver Fault Detection

– Reverse Battery-Protection Support

– Limp Home-Mode Support

– Overtemperature Warning and Shutdown

2 Applications

• Three-Phase BLDC and PMSM Motors

• CPAP and Pumps

• Robotics and RC Toys

• Power Tools

• Industrial Automation

3 Description

The DRV8305 device is a gate driver IC for threephase

motor-drive applications. The device provides

three high-accuracy and temperature compensated

half-bridge drivers, each capable of driving a highside

and low-side N-channel MOSFET. A charge

pump driver supports 100% duty cycle and lowvoltage

operation. The device can tolerate load dump

voltages up to 45-V.

The DRV8305 device includes three bidirectional

current-shunt amplifiers for accurate low-side current

measurements that support variable gain settings and

an adjustable offset reference.

The DRV8305 device has an integrated voltage

regulator (3.3-V or 5-V) to support an MCU or other

system power requirements. The voltage regulator

can be interfaced directly with a standard LIN

physical interface to allow low system standby and

sleep currents.

The gate driver uses automatic handshaking when

switching to prevent current shoot through. The VDS

of both the high-side and low-side MOSFETs is

accurately sensed to protect the external MOSFETs

from overcurrent conditions. The SPI provides

detailed fault reporting, diagnostics, and device

configurations such as gain options for the current

shunt amplifier, individual MOSFET overcurrent

detection, and gate-drive slew-rate control.