丝印：DRV593；Package：HLQFP(VFP)；±3-A HIGH-EFFICIENCY PWM POWER DRIVER

1FEATURES 2• Operation Reduces Output Filter Size and Cost by 50% Compared to DRV591 • ±3-A Maximum Output Current • Low Supply Voltage Operation: 2.8 V to 5.5 V • High Efficiency Generates Less Heat • Overcurrent and Thermal Protection • Fault Indicators for Overcurrent, Thermal and U

文件：1.42066 Mbytes 页数：28 Pages

TI

德州仪器

Silicon Diode, High Speed Switch

Description: The NTE593 is a silicon epitaxial high–speed diode in an SOT–23 type surface mount package. This device is intended for high–speed switching in hybrid thick–film circuits.

文件：18.24 Kbytes 页数：2 Pages

NTE

MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage

Features • Integrated gate protection diodes • Low noise figure • High gain • Biasing network on chip • Improved cross modulation at gain reduction • High AGC-range • SMD package • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications

文件：156.08 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage

Features • Integrated gate protection diodes • Low noise figure • High gain • Biasing network on chip • Improved cross modulation at gain reduction • High AGC-range • SMD package • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications

文件：156.08 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司