DRV3256-Q1中文资料德州仪器数据手册PDF规格书

1 Features

• AEC-Q100 qualified for automotive applications:

– Device ambient temperature grade 0: –40°C to

+150°C

– Device HBM ESD classification level 2

– Device CDM ESD classification level C4B

• Functional Safety-Compliant targeted

– Developed for functional safety applications

– Documentation to aid ISO 26262 system design

will be available upon production release

– Systematic capability up to ASIL D targeted

• Three N-Channel half-bridge gate driver

– 2-A/2.5-A max peak gate drive current

– Power architecture optimized for 48-V

applications

– 12-V/48-V split supply architecture

– 95-V transient absolute maximum rating of DC

link power supply (DHCP)

– 105-V Bootstrap voltage to support 90-V

MOSFET operating voltage range

– Bootstrap with charge pump for 100 duty

cycle

• Integrated 1x (DRV3256A-Q1) or 3x (DRV3256-

Q1) current shunt amplifiers

• Integrated configurable Active Short Circuit (ASC)

function

– Low-side (DRV3256A-Q1) or Low-side and

High-side (DRV3256-Q1/DRV3256B-Q1) ASC

support

– Low-side and High-side ASC support

– Device pin control available

– Fault handling capability

• Serial peripheral interface (SPI) with CRC

• Supports 3.3-V and 5-V logic inputs

• Advanced protection features

– Battery voltage monitors

– MOSFET VDS overcurrent monitors

– Rshunt overcurrent monitors

– MOSFET VGS gate fault monitors

– Analog built in self test

– Internal regulator and clock monitors

– Device thermal warning and shutdown

– Fault condition indicator pins

2 Applications

• Automotive 48-V Motor Drive Systems

– Belt and integrated starter generators, and

Motor generators

– Electrical Power Steering

– eTurbos and eBoosters

– Transmission control and actuation

– Oil, transmission, and water pumps

– HVAC compressors and fans

3 Description

The DRV3256-Q1 family of devices are highlyintegrated

three phase gate drivers for 48-V

automotive motor drive applications. These devices

are specifically designed to support high-power motor

drive applications by providing 2-A peak source

and 2.5-A peak sink gate drive currents, and 90-V

MOSFET transient over voltage support. A highly

efficient bootstrap architecture is used to minimize

power losses and self-heating of the gate drivers. A

charge pump allows for the gate drivers to support

100 PWM duty cycle control.

A wide range of diagnostics, monitoring, and

protection features supports a robust motor drive

system design. A highly configurable Active Short

Circuit (ASC) function which enables selected

external MOSFETs is integrated to achieve the fast

response to system faults and to eliminate the needs

of external components.

Three or single low-side current shunt amplifiers are

optionally provided to support resistor based low-side

current sensing.