DRV3233EPHPRQ1中文资料德州仪器数据手册PDF规格书

1 Features

• AEC-Q100 qualified for automotive applications -

Temperature options:

– DRV3233EPHP: –40°C to +150°C, TA

– DRV3233QPHP: –40°C to +125°C,TA

• Functional Safety-Compliant targeted

– Developed for functional safety applications

– Documentation to aid ISO 26262 system design

will be available

– Systematic capability up to ASIL D targeted

• Three phase half-bridge gate driver

– Drives six N-channel MOSFETs (NMOS)

– 4.5 to 60V wide operating voltage range

– Bootstrap architecture for high-side gate driver

– Charge pump for 50mA average gate current

– 100% PWM duty cycle support

– Overdrive supply of external switches

• Smart Gate Drive architecture

– 45-level configurable peak gate drive current up

to 1000 / 2000mA (source / sink)

– Three-step dynamic drive current control

– Soft shutdown for power stage protection

• Low-side Current Sense Amplifier

– Sub-1mV low input offset across temperature

– 9-level adjustable gain

• SPI-based detailed configuration and diagnostics

• DRVOFF pin to disable driver independently

• High voltage wake up pin (nSLEEP)

• Multiple PWM interface options available

– 6x, 3x, 1x PWM Modes

– PWM over SPI

• Supports 3.3V, and 5V Logic Inputs

• Optional programmable OTP for reset settings

• Advanced and configurable protection features

– Battery and power supply voltage monitors

– Phase feedback comparator

– MOSFET VDS and Rsense over current monitors

– Analog Built-In-Self-Test, Clock monitors

– Fault condition indicator pin

2 Applications

• 12V / 24V Automotive Motor-Control Applications

– Electrical Power Steering and Steer-by-Wire

– Electrical Mechanical Brake, Brake Boost

Assist and Brake-by-Wire

– Transmission and Shift-by-Wire

– Automotive Pumps

3 Description

The DRV3233-Q1 is an integrated smart gate driver

for 12V and 24V automotive three-phase BLDC

applications. The device provides three half-bridge

gate drivers, each capable of driving high-side and

low-side N-channel power MOSFETs. The DRV3233-

Q1 generates the correct gate drive voltages using

an integrated bootstrap diode and a GVDD charge

pump. The Smart Gate Drive architecture supports

configurable peak gate drive current from 0.8mA up

to 1A source and 2A sink. The DRV3233-Q1 can

operate from a single power supply with a wide input

range of 4.5 to 60V. A trickle charge pump enables

100% PWM duty cycle control, and provides overdrive

supply voltage for external switches.

The DRV3233-Q1 provides low-side current sense

amplifiers to support resistor based low-side current

sensing. The low offset of the amplifiers enables the

system to obtain precise motor current measurement.

A wide range of diagnostics and protection features

integrated in the DRV3233-Q1 enable a robust motor

drive system design and help eliminate the needs

of external components. The highly configurable

device response allows the device to be integrated

seamlessly into a variety of system designs.