ISF1268

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=31A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.105Ω(Max)@VGS=10V APPLICATIONS ·MotorDrive,DC-DCConverter,PowerSwitch andSolenoidDrive.

ISF1268

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=31A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.105Ω(Max)@VGS=10V APPLICATIONS ·MotorDrive,DC-DCConverter,PowerSwitch andSolenoidDrive.

ISF1268

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=31A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.105Ω(Max)@VGS=10V APPLICATIONS ·MotorDrive,DC-DCConverter,PowerSwitch andSolenoidDrive.

KTA1268

LowNoiseAmplifierApplication

LowNoiseAmplifierApplication HighVoltageApplication Features ●HighVoltage:Vceo＝-120V（Min） ●HighDCcurrentgainhFE=200~700.

KTA1268

SiliconPNPtransistorinaTO-92PlasticPackage

Descriptions SiliconPNPtransistorinaTO-92PlasticPackage. Features Lownoise,highhFE,highbreakdownvoltage. Applications Lownoiseaudioamplifierapplication.

KTA1268

Plastic-EncapsulateTransistors

LowNoiseAmplifierApplication HighVoltageApplication Features ●HighVoltage:Vceo＝-120V（Min） ●HighDCcurrentgainhFE=200~700.

KTA1268

EPITAXIALPLANARPNPTRANSISTOR(LOWNOISEAMPLIFIER,HIGHVOLTAGE)

LOWNOISEAMPLIFIERAPPLICATION. HIGHVOLTAGEAPPLICATION. FEATURES •LowNoise. :NF=3dB(Typ.),Rg=100Ω,VCE=-6V,IC=-100μA,f=1kHz :NF=0.5dB(Typ.),Rg=1kΩ,VCE=-6V,IC=-100μA,f=1kHz. •HighDCCurrentGain:hFE=200∼700. •HighVoltage:VCEO=-120V. •LowPulseNoise.Low1/fNoi

LB1268

3-ChannelHigh-CurrentLow-SaturationDriver

FEATURES •3-ChannelMagnetDriver. •HighCurrent(2.0AMax.)andLowSaturationVoltage(1.5V). •ParallelOperationCapability(Channel1+2). •On-ChipSparkKillerDiodes.

LB1268

3-Channel,High-Current,Low-SaturationDriverArray?

FeaturesandFunctions •3-channelmagnetdriver. •Highcurrent(2.0Amax.)andlowsaturationvoltage(1.5V). •Paralleloperationcapability(channel1+2) •On-chipsparkkillerdiodes.

LB1268CN

3-ChannelHigh-CurrentLow-SaturationDriver

FEATURES •3-ChannelMagnetDriver. •HighCurrent(2.0AMax.)andLowSaturationVoltage(1.5V). •ParallelOperationCapability(Channel1+2). •On-ChipSparkKillerDiodes.