DREA6040M说明书PDF资料原装现货威世科技-114ic电子网

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DREA6040M	文件：80.18 Kbytes Page：3 Pages	Surface Mount Oscillator FEATURES •Size:5.0x3.2x1.3(mm) •Miniaturepackage •Tri-stateenable/disable •HCMOScompatible •Tapeandreel •IRre-flow •1.8Vinputvoltage •Materialcategorization:Fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
APT6040	文件：50.6 Kbytes Page：4 Pages	N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS	ADPOW Advanced Power Technology	ADPOW
APT6040AN	文件：309.49 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=15.5A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
APT6040BN	文件：361.18 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
APT6040BN	文件：50.6 Kbytes Page：4 Pages	N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS	ADPOW Advanced Power Technology	ADPOW
APT6040BNR	文件：361.19 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
APT6040BVFR	文件：150.25 Kbytes Page：4 Pages	POWERMOSVFREDFET POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.	ADPOW Advanced Power Technology	ADPOW
APT6040BVFRG	文件：150.25 Kbytes Page：4 Pages	POWERMOSVFREDFET POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.	ADPOW Advanced Power Technology	ADPOW
APT6040BVR	文件：59.84 Kbytes Page：4 Pages	POWERMOSV POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Fast	ADPOW Advanced Power Technology	ADPOW
APT6040BVR	文件：337.51 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=16A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
APT6040HN	文件：297.87 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=16.5A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
APT6040SVFR	文件：150.25 Kbytes Page：4 Pages	POWERMOSVFREDFET POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.	ADPOW Advanced Power Technology	ADPOW
APT6040SVFRG	文件：150.25 Kbytes Page：4 Pages	POWERMOSVFREDFET POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.	ADPOW Advanced Power Technology	ADPOW
APT6040SVR	文件：59.84 Kbytes Page：4 Pages	POWERMOSV POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Fast	ADPOW Advanced Power Technology	ADPOW
AS6040	文件：3.39073 Mbytes Page：213 Pages	UltrasonicFlowMetersforGasMeters GeneralDescription AS6040isanultrasonicflowconverter(UFC)solutiondedicatedtogasmeters,butsuitableforwatermeters,too.Thesystemismadeoffourmajorblocks:supervisor,frontend,postprocessingandinterface.Thesupervisormanagesalltasksandisthemasterofthewholesyst	SCIOSENSESciosense B.V. 感奥艾半导体	SCIOSENSE
AS6040-BQFM	文件：3.39073 Mbytes Page：213 Pages	UltrasonicFlowMetersforGasMeters GeneralDescription AS6040isanultrasonicflowconverter(UFC)solutiondedicatedtogasmeters,butsuitableforwatermeters,too.Thesystemismadeoffourmajorblocks:supervisor,frontend,postprocessingandinterface.Thesupervisormanagesalltasksandisthemasterofthewholesyst	SCIOSENSESciosense B.V. 感奥艾半导体	SCIOSENSE
AS6040-QF_DK	文件：1.34859 Mbytes Page：16 Pages	DevelopmentKitUserGuide	SCIOSENSESciosense B.V. 感奥艾半导体	SCIOSENSE
AS6040-QF_DK_RB	文件：1.34859 Mbytes Page：16 Pages	DevelopmentKitUserGuide	SCIOSENSESciosense B.V. 感奥艾半导体	SCIOSENSE
ATXN6040D	文件：85.17 Kbytes Page：2 Pages	Crystal	CTSCTS Electronic Components 西迪斯西迪斯公司	CTS
BD6040GUL	文件：210.71 Kbytes Page：2 Pages	ChargerProtectionICwithInternalFET	ROHMRohm Semiconductor 罗姆罗姆半导体集团	ROHM

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市赛恒电子科技有限公司	DREAM-1	ABOV	21+	SOP	6688	十年老店,原装正品	询价
深圳市明嘉莱科技有限公司	DREAM-1	ABOV	23+	NA	880000	明嘉莱只做原装正品现货	询价
深圳市能创芯电子科技有限公司	DREAM4		23+	SOP-8P	3000	原装正品假一罚百!可开增票!	询价
贸泽芯城（深圳）电子科技有限公司	DREAM4	N/A	21+ROHS	SOP-8	10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市能元时代电子有限公司	DREAM4	CORERIVE	23+	SOP3.9	24467	##公司主营品牌长期供应100%原装现货可含税提供技术	询价
深圳市科恒伟业电子有限公司	DREAM4MB		1733+	DIP32	6528	只做进口原装正品假一赔十!	询价
深圳市拓亿芯电子有限公司	DREAM4MB	N/A	23+	DIP32	15000	一级代理原装现货	询价
深圳市航润创能电子集团有限公司	DREAM4MB	N/A	21+	DIP32	299	原装现货假一赔十	询价
深圳市珩瑞科技有限公司	DREAM4MB	N/A	21+	DIP32	6000	原装正品	询价
深圳市国宇半导体科技有限公司	DREAM4MB	N/A	23+	DIP32	10000	公司只做原装正品	询价

更多DREA6040M供应商更新时间2024-6-7 14:41:00

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