GERMANIUM DOIDES

GERMANIUM DIODES

文件：1.97664 Mbytes 页数：2 Pages

AAC

GERMANIUM DOIDES

文件：1.97664 Mbytes 页数：2 Pages

AMMSEMI

丝印：DR3245AQ；Package：HTQFP；DRV3245Q-Q1 3-Phase Automotive Gate Driver Unit (GDU) With High Performance Sensing, Protection and Diagnostics

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: –40°C to +125°C, TA • SafeTI™semiconductor component – Developed according to the applicable requirements of ISO 26262 • 4.5-V to 45-V operating voltage • Programmable peak gate drive currents up to

文件：1.18689 Mbytes 页数：17 Pages

TI

德州仪器

丝印：DR3245AQ；Package：HTQFP；DRV3245Q-Q1 3-Phase Automotive Gate Driver Unit (GDU) With High Performance Sensing, Protection and Diagnostics

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: –40°C to +125°C, TA • Functional Safety-Compliant – Developed for functional safety applications – Documentation available to aid ISO 26262 system design up to ASIL D – Systematic capability up to AS

文件：1.17813 Mbytes 页数：19 Pages

TI

德州仪器

丝印：DR3245BQ；Package：HTQFP；DRV3245Q-Q1 3-Phase Automotive Gate Driver Unit (GDU) With High Performance Sensing, Protection and Diagnostics

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: –40°C to +125°C, TA • SafeTI™semiconductor component – Developed according to the applicable requirements of ISO 26262 • 4.5-V to 45-V operating voltage • Programmable peak gate drive currents up to

文件：1.18689 Mbytes 页数：17 Pages

TI

德州仪器

丝印：DR3245BQ；Package：HTQFP；DRV3245Q-Q1 3-Phase Automotive Gate Driver Unit (GDU) With High Performance Sensing, Protection and Diagnostics

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: –40°C to +125°C, TA • Functional Safety-Compliant – Developed for functional safety applications – Documentation available to aid ISO 26262 system design up to ASIL D – Systematic capability up to AS

文件：1.17813 Mbytes 页数：19 Pages

TI

德州仪器

丝印：DR3245CQ；Package：HTQFP；DRV3245Q-Q1 3-Phase Automotive Gate Driver Unit (GDU) With High Performance Sensing, Protection and Diagnostics

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: –40°C to +125°C, TA • SafeTI™semiconductor component – Developed according to the applicable requirements of ISO 26262 • 4.5-V to 45-V operating voltage • Programmable peak gate drive currents up to

文件：1.18689 Mbytes 页数：17 Pages

TI

德州仪器

丝印：DR3245CQ；Package：HTQFP；DRV3245Q-Q1 3-Phase Automotive Gate Driver Unit (GDU) With High Performance Sensing, Protection and Diagnostics

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: –40°C to +125°C, TA • Functional Safety-Compliant – Developed for functional safety applications – Documentation available to aid ISO 26262 system design up to ASIL D – Systematic capability up to AS

文件：1.17813 Mbytes 页数：19 Pages

TI

德州仪器

丝印：DR3245SQ；Package：HTQFP；DRV3245Q-Q1 3-Phase Automotive Gate Driver Unit (GDU) With High Performance Sensing, Protection and Diagnostics

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: –40°C to +125°C, TA • SafeTI™semiconductor component – Developed according to the applicable requirements of ISO 26262 • 4.5-V to 45-V operating voltage • Programmable peak gate drive currents up to

文件：1.18689 Mbytes 页数：17 Pages

TI

德州仪器

丝印：DR3245SQ；Package：HTQFP；DRV3245Q-Q1 3-Phase Automotive Gate Driver Unit (GDU) With High Performance Sensing, Protection and Diagnostics

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: –40°C to +125°C, TA • Functional Safety-Compliant – Developed for functional safety applications – Documentation available to aid ISO 26262 system design up to ASIL D – Systematic capability up to AS

文件：1.17813 Mbytes 页数：19 Pages

TI

德州仪器