OCTAL THREE-STATE BIDIRECTIONAL BUS TRANSCEIVERS

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Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

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IRF

Generation V Technology Ultra

Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free 100 Features VDS (V) = 20V RDS(ON) 53m (VGS = 4.5V) RDS(ON) 70m (VGS = 2.7V) VDS (V) = -20V RDS(ON) m (VGS = -4.5V)
RDS(ON) 140m (VGS = -2.7V) N-

文件：491.51 Kbytes 页数：9 Pages

UMW

友台半导体

MOSFET

Features N-Ch： VDS (V) = 20V RDS(ON)

文件：450.97 Kbytes 页数：9 Pages

EVVOSEMI

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