Small Signal Switching Diodes

VOLTAGE RANGE: 60 - 40 V POWER DIDDIPATION: 400 mW Features ◇ For general purpose applications ◇ The low forward voltage drop and fast switching marking it ideal for protection of MOS devices,steering, biasing and couping diodes for fast switching and low logic level applications.

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Small Signal Schottky Diodes

VOLTAGE RANGE: 100 V CURRENT: 0.15 A FEATURES ◇ For general purpose applications ◇ These diodes features very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excess ive voltage, such as electrostatic discharges ◇ These diodes

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Small Signal Schottky Diodes

VOLTAGE RANGE: 70V POWER DISSIPATION: 400 mW Features ◇ For general purpose applications ◇ fast switching and low logic level applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching m ake it i

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Small Signal Schottky Diodes

Features ◇ Low forward voltage drop ◇ Satisfory wave detection efficiency ◇ Extremely low reverse current IR ◇ Small temperature coefficient of forward characteristics ◇ Extremely low reverse current These products are ideal for use in ordinary wave detection and super high speed switchi

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Small Signal Schottky Diodes

VOLTAGE RANGE: 60 V POWER DISSIPATION:400 mW Features ◇ For general purpose applications ◇ Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasi

文件：144.76 Kbytes 页数：2 Pages

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Small Signal Schottky Diodes

VOLTAGE RANGE: 40V CURRENT: 0.03 A DO - 35(GLASS) FEATURES Metal sillicon junction m ajority carrier conduction High current capability,low forward voltage drop Extremely low reverse current IR Ultra speed switching characteristics Small temperature coefficient of forward

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Small Signal Switching Diodes

Features ◇ For general purpose applications ◇ Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and coupling diodes for fast switching and low logic le

文件：159.63 Kbytes 页数：2 Pages

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鲁光电子

Small Signal Schottky Diodes

Features ◇ For general purpose applications ◇ This diodes features very low turn-on voltage and fast switching. This devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges ◇ Metal silicon schottky barrier device which is protect

文件：125.23 Kbytes 页数：1 Pages

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DO-35 Hermetically Sealed Glass Axial Package

文件：225.13 Kbytes 页数：3 Pages

CDIL

Sample Instructions for Choosing a Packing Option

文件：306.92 Kbytes 页数：8 Pages

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