INA2181

Automotive,bidirectional,low-andhigh-sidevoltageoutput,current-senseamplifiers

INA2181

Automotive,Bidirectional,Low-andHigh-SideVoltageOutput,Current-SenseAmplifiers

INA2181

INAx181Bidirectional,Low-andHigh-SideVoltageOutput,Current-SenseAmplifiers

1Features •Common-moderange(VCM):–0.2Vto+26V •Highbandwidth:350kHz(A1devices) •Offsetvoltage: –±150μV(maximum)atVCM=0V –±500μV(maximum)atVCM=12V •Outputslewrate:2V/μs •Bidirectionalcurrent-sensingcapability •Accuracy: –±1gainerror(maximum) –

INA2181

INAx181-Q1Automotive,Bidirectional,Low-andHigh-SideVoltageOutput,Current-SenseAmplifiers

1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°C≤TA≤125°C –HBMESDclassificationlevel2 –CDMESDclassificationlevelC6 •FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign •Common-moderange(VCM):–

IPP-2181

OUTLINECOUP

IR2181

HIGHANDLOWSIDEDRIVER

IR2181

HIGHANDLOWSIDEDRIVER

Description TheIR2181(4)(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOS

IR2181

HIGHANDLOWSIDEDRIVER

IR2181

HIGHANDLOWSIDEDRIVER

Description TheIR2213(S)isahighvoltage,highspeedpowerMOSFETandIGBTdriverwithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.LogicinputsarecompatiblewithstandardCMOSorLSTT

IR2181

HIGHANDLOWSIDEDRIVER

Description TheIR2181(4)(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOSor